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Cover image for Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs)

Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs)

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Joyner - Microforms B300 NAS 1.15:211983 ✔ Available
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Nonlinear design

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III-nitride electronic devices

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