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010 a| 2020300248;

020 a| 9780128175446q| (hardcover);

020 a| 0128175443q| (hardcover);

020 z| 9780128175453q| (ePub ebook);

035 a| (WaSeSS)ssj0002220828;

049 a| EREEa| NEHH;

050 00 a| MLCM 2022/45444 (T);

245 00 a| III-nitride electronic devicesh| [electronic resource] /c| edited by Rongming Chu, Keisuke Shinohara.;

250 a| First edition.;

260 a| Cambridge, MA :b| Academic Press, an imprint of Elsevier,c| 2019.;

300 a| xii, 528 pages :b| colour illustrations ;c| 24 cm;

490 0 a| Semiconductors and semimetals,x| 0080-8784 ;v| volume one hundred and two;

500 a| Minimal Level Cataloging Plus.5| DLC;

504 a| Includes bibliographical references and index.;

505 0 a| Preface / Rongming Chu, Keisuke Shinohara -- Chapter One. Electronic properties of III-nitride materials and basics of III-nitride FETs / Peter M. Asbeck -- Chapter Two. Epitaxial growth of III-nitride electronic devices / Yu Cao -- Chapter Three. III-Nitride microwave power transistors / Jeong-Sun Moon -- Chapter Four. III-Nitride millimeter wave transistors / Keisuke Shinohara -- Chapter Five. III-Nitride lateral transistor power switch / Sang-Woo Han, Rongming Chu -- Chapter Six. III-Nitride vertical devices / Tohru Oka -- Chapter Seven. Physics-based III-Nitride device modeling / Ujwal Radhakrishna -- Chapter Eight. Power electronics applications of III-nitride transistors / Yifeng Wu -- Chapter Nine. N-polar III-nitride transistors / Man Hoi Wong, Umesh K. Mishra -- Chapter Ten. III-Nitride ultra-wide-bandgap electronic devices / Robert J. Kaplar, Andrew A. Allerman, Andrew M. Armstrong, Albert G. Baca, Mary H. Crawford, Jeramy R. Dickerson, Erica A. Douglas, Arthur J. Fischer, Brianna A. Klein, Shahed Reza -- Chapter Eleven. III-Nitride p-channel transistors / Akira Nakajima -- Chapter Twelve. Emerging materials, processing and device concepts: epitaxial transition metal nitride electronic materials / David J. Meyer, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey -- Chapter Thirteen. Epitaxial lift-off for III-nitride devices / Chris Youtsey, Robert McCarthy, Patrick Fay.;

506 a| Available only to authorized users.;

520 a| "III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more"--Publisher's web page, viewed October 18, 2019;

538 a| Mode of access: World Wide Web;

650 0 a| Electronic apparatus and appliances.=| ^A19725;

650 0 a| Nitrides.=| ^A451646;

655 0 a| Electronic books.=| ^A491897;

700 1 a| Chu, Rongming.?| UNAUTHORIZED;

700 1 a| Shinohara, Keisuke,d| 1971-?| UNAUTHORIZED;

856 40 z| Full text available from Book Series Package - Physics and Astronomy [BSPHAS]u| https://go.openathens.net/redirector/ecu.edu?url=https%3A%2F%2Fwww.sciencedirect.com%2Fscience%2Fbookseries%2F00808784%2F102;

947 a| (OCoLC)on1089560937;

949 a| CLICK ON WEB ADDRESSw| ASISh| JOYNER188;

949 a| CLICK ON WEB ADDRESSw| ASISh| HSL77;

949 a| CLICK ON WEB ADDRESSw| ASISh| JMUSIC60;

596 a| 1 3 4;

998 a| 5219618;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 5219618-1001l| JNETm| JOYNERr| Ys| Yt| JNESSBKu| 12/14/2019x| EBOOKz| JERESOURCE;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 5219618-2001l| HSLELECm| HSLr| Ys| Yt| HEBKu| 12/14/2019x| EBOOKz| HERESOURCE;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 5219618-3001l| MNETm| JMUSICr| Ys| Yt| MNESSBKu| 12/14/2019x| EBOOKz| JERESOURCE;

III-nitride electronic devices / edited by Rongming Chu, Keisuke Shinohara.

Other author	Chu, Rongming.
Other author	Shinohara, Keisuke, 1971-
Format	Electronic
Edition	First edition.
Publication Info	Cambridge, MA : Academic Press, an imprint of Elsevier, 2019.
Description	xii, 528 pages : colour illustrations ; 24 cm
Supplemental Content	Full text available from Book Series Package - Physics and Astronomy [BSPHAS]
Subjects	Electronic apparatus and appliances. Nitrides.

Series	Semiconductors and semimetals, 0080-8784 ; volume one hundred and two
Contents	Preface / Rongming Chu, Keisuke Shinohara -- Chapter One. Electronic properties of III-nitride materials and basics of III-nitride FETs / Peter M. Asbeck -- Chapter Two. Epitaxial growth of III-nitride electronic devices / Yu Cao -- Chapter Three. III-Nitride microwave power transistors / Jeong-Sun Moon -- Chapter Four. III-Nitride millimeter wave transistors / Keisuke Shinohara -- Chapter Five. III-Nitride lateral transistor power switch / Sang-Woo Han, Rongming Chu -- Chapter Six. III-Nitride vertical devices / Tohru Oka -- Chapter Seven. Physics-based III-Nitride device modeling / Ujwal Radhakrishna -- Chapter Eight. Power electronics applications of III-nitride transistors / Yifeng Wu -- Chapter Nine. N-polar III-nitride transistors / Man Hoi Wong, Umesh K. Mishra -- Chapter Ten. III-Nitride ultra-wide-bandgap electronic devices / Robert J. Kaplar, Andrew A. Allerman, Andrew M. Armstrong, Albert G. Baca, Mary H. Crawford, Jeramy R. Dickerson, Erica A. Douglas, Arthur J. Fischer, Brianna A. Klein, Shahed Reza -- Chapter Eleven. III-Nitride p-channel transistors / Akira Nakajima -- Chapter Twelve. Emerging materials, processing and device concepts: epitaxial transition metal nitride electronic materials / David J. Meyer, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey -- Chapter Thirteen. Epitaxial lift-off for III-nitride devices / Chris Youtsey, Robert McCarthy, Patrick Fay.
Abstract	"III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more"--Publisher's web page, viewed October 18, 2019
General note	Minimal Level Cataloging Plus.
Bibliography note	Includes bibliographical references and index.
Access restriction	Available only to authorized users.
Technical details	Mode of access: World Wide Web
Genre/form	Electronic books.
LCCN	2020300248
ISBN	9780128175446 (hardcover)
ISBN	0128175443 (hardcover)
ISBN	(ePub ebook)

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