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010 a| 2022277490;

015 a| GBC2431762| bnb;

016 7 a| 0204995052| Uk;

020 a| 1630818682q| hardcover;

020 a| 9781630818685q| hardcover;

020 z| 9781630818692q| ebook;

035 a| (WaSeSS)ssj0002712203;

042 a| lccopycat;

049 a| EREEa| NEHH;

050 00 a| TK7871.95b| .L33 2022;

082 04 a| 621.3815/2842| 23;

100 1 a| Ladbrooke, Peter H.?| UNAUTHORIZED;

245 10 a| Nonlinear designh| [electronic resource] :b| FETs and HEMTs /c| Peter H. Ladbrooke.;

246 3 a| FETs and HEMTs;

260 a| Norwood, MA :b| Artech House,c| [2022];

300 a| xx, 347 pages :b| illustrations ;c| 26 cm.;

490 1 a| Artech House microwave library;

504 a| Includes bibliographical references and index.;

506 a| Available only to authorized users.;

520 a| Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used--the Angelov (or Chalmers) model.;

538 a| Mode of access: World Wide Web;

650 0 a| Field-effect transistorsx| Design and construction.=| ^A86561;

650 0 a| Modulation-doped field-effect transistorsx| Design and construction.=| ^A448350;

650 7 a| Modulation-doped field-effect transistorsx| Design and construction.2| fast0| (OCoLC)fst01024517;

655 0 a| Electronic books.=| ^A491897;

830 0 a| Artech House microwave library.=| ^A263156;

856 40 z| Full text available from Ebook Central - Academic Completeu| https://ebookcentral.proquest.com/lib/eastcarolina/detail.action?docID=6877367;

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Nonlinear design FETs and HEMTs / Peter H. Ladbrooke.

Author/creator	Ladbrooke, Peter H.
Format	Electronic
Publication Info	Norwood, MA : Artech House, [2022]
Description	xx, 347 pages : illustrations ; 26 cm.
Supplemental Content	Full text available from Ebook Central - Academic Complete
Subjects	Field-effect transistors--Design and construction. Modulation-doped field-effect transistors--Design and construction.

Variant title	FETs and HEMTs
Series	Artech House microwave library Artech House microwave library. ^A263156
Abstract	Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used--the Angelov (or Chalmers) model.
Bibliography note	Includes bibliographical references and index.
Access restriction	Available only to authorized users.
Technical details	Mode of access: World Wide Web
Genre/form	Electronic books.
LCCN	2022277490
ISBN	1630818682 hardcover
ISBN	9781630818685 hardcover
ISBN	ebook

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