Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / Jon C. Freeman.
| Author/creator | Freeman, Jon C. author. |
| Other author | NASA Glenn Research Center, issuing body. |
| Format | Electronic |
| Publication | Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2003. |
| Description | 1 online resource (65 pages) : illustrations. |
| Supplemental Content | https://purl.fdlp.gov/GPO/LPS42594 |
| Series | NASA/TM ; 2003-211983 NASA technical memorandum 2003-211983. ^A467613 |
| General note | "February 2003." |
| General note | "Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page. |
| General note | GPO Cataloging Record Distribution Program (CRDP). |
| Bibliography note | Includes bibliographical references (pages 62-65). |
| Report note | Technical memorandum. |
| Funding information | Sponsored by the National Aeronautics and Space Administration WBS-22-755-12-27 E-13653 |
| Source of description | Description based on online resource; title from PDF title page (NASA, viewed May 25, 2017). |
| Issued in other form | Print version: Basic equations for the modeling of gallium nitride (gan) high electron mobility transistors (hemts) |
| Issued in other form | Microfiche version: Freeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) |
| GPO item number | 0830-D (online) |
| Govt. docs number | NAS 1.15:211983 |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Electronic Resources | Access Content Online | ✔ Available |