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Cover image for Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications

Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications

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Cover image for Altering plasmonic nanoparticle size through thermal annealing for improved photovoltaic devices

Altering plasmonic nanoparticle size through thermal annealing for improved photovoltaic devices

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Cover image for MSM-metal semiconductor metal photo-detector using black silicon germanium (SiGe) for extended wavelength near infrared detection

MSM-metal semiconductor metal photo-detector using black silicon germanium (SiGe) for extended wavelength near infrared detection

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Cover image for Electrical and optical response properties of MEH-PPV semiconductor polymer Schottky diodes

Electrical and optical response properties of MEH-PPV semiconductor polymer Schottky diodes

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Cover image for High efficiency c-silicon solar cells based on micro-nanoscale structure

High efficiency c-silicon solar cells based on micro-nanoscale structure

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Cover image for Characterization of multi temperature and multi RF chuck power grown silicon nitride films by PECVD and ICP vapor deposiiton

Characterization of multi temperature and multi RF chuck power grown silicon nitride films by PECVD and ICP vapor deposiiton

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Cover image for GaAs high breakdown voltage front and back side processed Schottky detectors for x-ray detection

GaAs high breakdown voltage front and back side processed Schottky detectors for x-ray detection

  • 2007
  • Format: Electronic
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Cover image for Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching

Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching

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