Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching / Fred Semendy, Phillip Boyd, and Unchul Lee.

Author/creator Semendy, Fred
Other author Boyd, Phillip.
Other author Lee, Unchul.
Other author U.S. Army Research Laboratory.
Format Electronic
Publication InfoAdelphi, MD : Army Research Laboratory, [2004]
Description1 online resource (iv, 15 pages) : illustrations (chiefly color), color charts.
Supplemental Contenthttps://purl.fdlp.gov/GPO/LPS125009
Subjects

SeriesARL-TR ; 3370
ARL-TR (Aberdeen Proving Ground, Md.) ; 3370. ^A566074
General noteTitle from PDF title screen (viewed on Aug. 10, 2010).
General note"November 2004."
Bibliography noteIncludes bibliographical references (p. 11-12).
Report noteFinal report.
GPO item number0324-A-01 (online)
Govt. docs number D 101.133:3370

Availability

Library Location Call Number Status Item Actions
Electronic Resources Access Content Online ✔ Available