Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications / Fred Semendy [and three others].
| Author/creator | Semendy, Fred author. |
| Other author | U.S. Army Research Laboratory issuing body. |
| Format | Electronic |
| Publication | Adelphi, MD : Army Research Laboratory, 2012. |
| Description | 1 online resource (vi, 16 pages) : color illustrations. |
| Supplemental Content | https://purl.fdlp.gov/GPO/gpo33169 |
| Subjects |
| Series | ARL-TR ; 6128 ARL-TR (Aberdeen Proving Ground, Md.) ; 6128. ^A566074 |
| General note | Title from title screen (viewed on Jan. 17, 2013). |
| General note | "September 2012." |
| Bibliography note | Includes bibliographical references (pages 11-12). |
| Report note | Final. |
| Issued in other form | Print version: Semendy, Fred. Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications |
| GPO item number | 0324-A-01 (online) |
| Govt. docs number | D 101.133:6128 |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Electronic Resources | Access Content Online | ✔ Available |