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The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
| Location | Call # | Status |
|---|---|---|
| Joyner - Fed Docs Stacks | C13.10:400-47 | ✔ Available |
The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon
| Location | Call # | Status |
|---|---|---|
| Joyner - Fed Docs Stacks | C 13.10:400-33 | ✔ Available |