The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon / Sheng S. Li.

Author/creator Li, Sheng S., 1938-
Format Book
Publication InfoWashington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off, 1977.
Descriptionvii, 28 pages : illustrations ; 26 cm.
Subjects

SeriesSemiconductor measurement technology
NBS special publication ; 400-33
Semiconductor measurement technology. ^A428054
NBS special publication 400-33. ^A2701
Bibliography noteIncludes bibliographical references.
LCCN 76608381
Govt. docs number C 13.10:400-33

Availability

Library Location Call Number Status Item Actions
Joyner Fed Docs Stacks C 13.10:400-33 ✔ Available Place Hold