The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / Sheng S. Li.
| Author/creator | Li, Sheng S., 1938- |
| Other author | United States. Defense Advanced Research Projects Agency. |
| Other author | National Science Foundation (U.S.) |
| Format | Book |
| Publication Info | Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off, 1979. |
| Description | vi, 42 pages : graphs ; 26 cm. |
| Subjects |
| Series | Semiconductor measurement technology NBS special publication ; 400-47 Semiconductor measurement technology. ^A428054 NBS special publication 400-47. ^A2701 |
| General note | "This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation." |
| Bibliography note | Includes bibliographical references and index. |
| LCCN | 78024185 |
| Govt. docs number | C13.10:400-47 |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Joyner | Fed Docs Stacks | C13.10:400-47 | ✔ Available | Place Hold |