Tools

LEADER 02087cam a2200493 a 4500

001 ocm07040743;

003 OCoLC;

005 20141212182334.0;

008 810921s1980 dcu b f000 0 eng c;

010 a| 80600158;

020 c| $3.75;

035 a| (Sirsi) o07040743;

035 a| (OCoLC)7040743;

049 a| ERE#;

050 00 a| QC100b| .U57 no. 400-63a| QC611.8.S5;

082 00 a| 602/.18 sa| 546/.683572| 19;

086 0 a| C 13.10:400-63;

100 1 a| Larrabee, R. D.=| ^A598156;

245 12 a| A FORTRAN program for calculating the electrical parameters of extrinsic silicon /c| R.D. Larrabee, W.R. Thurber, and W.M. Bullis.;

260 a| Washington, D.C. :b| U.S. Dept. of Commerce, National Bureau of Standards :b| For sale by the Supt. of Docs., U.S. G.P.O.,c| 1980.;

300 a| iv, 48 pages ;c| 27 cm.;

336 a| text2| rdacontent;

337 a| unmediated2| rdamedia;

338 a| volume2| rdacarrier;

490 1 a| NBS special publication ;v| 400-63;

490 1 a| Semiconductor measurement technology;

500 a| "Electron Devices Division, Center for Electronics and Electrical Engineering, National Engineering Laboratory, National Bureau of Standards.";

500 a| "Issued October 1980.";

500 a| S/N 003-003-02260-8.;

500 a| Item 247.;

504 a| Includes bibliographical references.;

650 0 a| Siliconx| Electric propertiesx| Data processing.=| ^A420609;

650 0 a| FORTRAN (Computer program language)=| ^A20341;

700 1 a| Thurber, W. Robert.=| ^A598135;

700 1 a| Bullis, W. Murray,d| 1930-=| ^A434230;

710 1 a| United States.b| National Bureau of Standards.=| ^A44678;

710 2 a| Center for Electronics and Electrical Engineering (U.S.).b| Electron Devices Division.=| ^A598067;

830 0 a| Semiconductor measurement technology.=| ^A428054;

830 0 a| NBS special publicationv| 400-63.=| ^A2701;

994 a| C0b| ERE;

596 a| 1;

998 a| 997993;

999 a| C 13.10:400-63w| SUDOCc| 1i| 30372013334146d| 6/8/2005l| JDOSm| JOYNERr| Ys| Yt| JDOSBKu| 6/8/2005x| BOOKz| JFEDDOCSo| .STAFF. 0;

A FORTRAN program for calculating the electrical parameters of extrinsic silicon / R.D. Larrabee, W.R. Thurber, and W.M. Bullis.

Author/creator	Larrabee, R. D.
Format	Book
Publication Info	Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1980.
Description	iv, 48 pages ; 27 cm.
Subjects	Silicon--Electric properties. --Data processing. FORTRAN (Computer program language)

Other author/creator	Thurber, W. Robert.
Other author/creator	Bullis, W. Murray, 1930-
Other author/creator	United States. National Bureau of Standards.
Other author/creator	Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division.
Series	NBS special publication ; 400-63 Semiconductor measurement technology Semiconductor measurement technology. ^A428054 NBS special publication 400-63. ^A2701
General note	"Electron Devices Division, Center for Electronics and Electrical Engineering, National Engineering Laboratory, National Bureau of Standards."
General note	"Issued October 1980."
General note	S/N 003-003-02260-8.
General note	Item 247.
Bibliography note	Includes bibliographical references.
LCCN	80600158
Govt. docs number	C 13.10:400-63

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Joyner	Fed Docs Stacks	C 13.10:400-63	✔ Available	Place Hold

A FORTRAN program for calculating the electrical parameters of extrinsic silicon / R.D. Larrabee, W.R. Thurber, and W.M. Bullis.

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