Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes / James M. Kenney ; Electronic Technology Division.

Author/creator Kenney, James M.
Other author Institute for Applied Technology (U.S.). Electronic Technology Division.
Other author United States. Defense Nuclear Agency.
Format Book
Publication InfoWashington : U.S. Dept. of Commerce, National Bureau of Standards, Institute for Applied Technology, Electronic Technology Division : For sale by the Supt. of Docs., U.S. Govt. Print. Off, 1976.
Description2 unnumbered pages, 26 pages, 1 unnumbered pages : illustrations ; 26 cm.
Subjects

SeriesSemiconductor measurement technology
NBS special publication ; 400-7
Semiconductor measurement technology. ^A428054
NBS special publication 400-7. ^A2701
General noteCODEN: XNBSAV.
General noteActivity supported in cooperation with the Defense Nuclear Agency.
General noteItem 247.
General noteS/N 003-003-01635-7.
Issued in other formOnline version: Kenney, James M. Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes. Washington : U.S. Dept. of Commerce, National Bureau of Standards, Institute for Applied Technology, Electronic Technology Division : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1976
LCCN 76005868
GPO item number247
Govt. docs number C 13.10:400-7
Stock number003-003-01635-7

Availability

Library Location Call Number Status Item Actions
Joyner Fed Docs Stacks C 13.10:400-7 ✔ Available Place Hold