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010 a| 2023036437;

020 a| 9781032670270q| (ebook);

020 z| 9781032392851q| (hardback);

020 z| 9781032670263q| (paperback);

035 a| (WaSeSS)ssj0002966657;

042 a| pcc;

049 a| EREEa| NEHH;

050 00 a| TK7871.99.M44;

082 00 a| 621.3815/2842| 23/eng/20240116;

245 00 a| Advanced MOS devices and their circuit applicationsh| [electronic resource] /c| edited by Ankur Beohar, Ribu Mathew, Abhishek Kumar Upadhyay and Santosh Kumar Vishvakarma.;

250 a| First edition.;

260 a| Boca Raton :b| CRC Press, Taylor & Francis Group,c| 2024.;

300 a| 1 online resource;

504 a| Includes bibliographical references and index.;

505 0 a| An overview of DC/RF performance of nanosheet field effect transistor for future low power applications / Arun A V, Sajeesh M, Jobymol Jacob, J Ajayan -- Device design and analysis of 3D SCwRD cylindrical (Cyl) gate-all-around (GAA) tunnel FET using split-channel and spacer engineering / Ankur Beohar, Seema Tiwari, Kavita Khare, Santosh Kumar Vishvakarma -- Investigation of High-K dielectrics for single and multi-gate FETs / Sresta Valasa, Shubham Tayal, Laxman Raju Thoutam -- Measurement of back gate biasing for ultra low power subthreshold logic in FinFET device / Ajay Kumar Dadoria, Uday Panwar, Narendra Kumar Garg -- Compact analytical model for graphene field effect transistor : drift-diffusion approach / Abhishek Kumar Upadhyay, Siromani Balmukund Rahi -- Design of CNTFET-based ternary logic flip-flop and counter circuits using unary operators / Trapti Sharma -- Novel radiation hardened low power 12 transistors sram cell for aerospace application / Vancha Sharath Reddy, Arjun Singh Yadav, Soumya Sengupta -- Nanoscale CMOS static random access memory (SRAM) design : trends and challenges / Sunanda Ambulkar, Jeetendra Kumar Mishra -- Variants based Gate Modification (VGM) technique for reducing leakage power and short channel effect in DSM circuits / Uday Panwar, Ajay Kumar Dadoria -- A novel approach for high speed and low power by using nano-VLSI interconnects / Narendra Kumar Garg , Vivek Singh Kushwah, Ajay Kumar Dadoria.;

506 a| Available only to authorized users.;

520 a| "The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book discusses advanced MOS devices and their circuit design for energy-efficient systems on chips (SoCs) and covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low power applications. It examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low power MOS transistors and includes research problem statements with specifications, commercially available industry data in the appendix. The book presents Verilog-A model-based simulations for circuit analysis.The text provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology"--c| Provided by publisher.;

538 a| Mode of access: World Wide Web;

588 a| Description based on print version record and CIP data provided by publisher.;

650 0 a| Metal oxide semiconductor field-effect transistors.=| ^A256237;

655 0 a| Electronic books.=| ^A491897;

700 1 a| Beohar, Ankur.?| UNAUTHORIZED;

700 1 a| Mathew, Ribu.?| UNAUTHORIZED;

700 1 a| Upadhyay, Abhishek Kumar.?| UNAUTHORIZED;

700 1 a| Vishvakarma, Santosh Kumar.?| UNAUTHORIZED;

776 08 i| Print version:t| Advanced MOS devices and their circuit applicationsb| First edition.d| Boca Raton : CRC Press, Taylor & Francis Group, 2024z| 9781032392851w| (DLC) 2023036436;

856 40 z| Full text available from eBooks on EBSCOhostu| https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=3731076&scope=site&custid=s5822723&authtype=ip,shib;

949 a| CLICK ON WEB ADDRESSw| ASISh| JOYNER188;

949 a| CLICK ON WEB ADDRESSw| ASISh| HSL77;

949 a| CLICK ON WEB ADDRESSw| ASISh| JMUSIC60;

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999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 6739123-2001l| HSLELECm| HSLr| Ys| Yt| HEBKu| 7/15/2026x| EBOOKz| HERESOURCE;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 6739123-3001l| MNETm| JMUSICr| Ys| Yt| MNESSBKu| 7/15/2026x| EBOOKz| JERESOURCE;

Advanced MOS devices and their circuit applications / edited by Ankur Beohar, Ribu Mathew, Abhishek Kumar Upadhyay and Santosh Kumar Vishvakarma.

Format	Electronic
Edition	First edition.
Publication Info	Boca Raton : CRC Press, Taylor & Francis Group, 2024.
Description	1 online resource
Supplemental Content	Full text available from eBooks on EBSCOhost
Subjects	Metal oxide semiconductor field-effect transistors.

Other author/creator	Beohar, Ankur.
Other author/creator	Mathew, Ribu.
Other author/creator	Upadhyay, Abhishek Kumar.
Other author/creator	Vishvakarma, Santosh Kumar.
Contents	An overview of DC/RF performance of nanosheet field effect transistor for future low power applications / Arun A V, Sajeesh M, Jobymol Jacob, J Ajayan -- Device design and analysis of 3D SCwRD cylindrical (Cyl) gate-all-around (GAA) tunnel FET using split-channel and spacer engineering / Ankur Beohar, Seema Tiwari, Kavita Khare, Santosh Kumar Vishvakarma -- Investigation of High-K dielectrics for single and multi-gate FETs / Sresta Valasa, Shubham Tayal, Laxman Raju Thoutam -- Measurement of back gate biasing for ultra low power subthreshold logic in FinFET device / Ajay Kumar Dadoria, Uday Panwar, Narendra Kumar Garg -- Compact analytical model for graphene field effect transistor : drift-diffusion approach / Abhishek Kumar Upadhyay, Siromani Balmukund Rahi -- Design of CNTFET-based ternary logic flip-flop and counter circuits using unary operators / Trapti Sharma -- Novel radiation hardened low power 12 transistors sram cell for aerospace application / Vancha Sharath Reddy, Arjun Singh Yadav, Soumya Sengupta -- Nanoscale CMOS static random access memory (SRAM) design : trends and challenges / Sunanda Ambulkar, Jeetendra Kumar Mishra -- Variants based Gate Modification (VGM) technique for reducing leakage power and short channel effect in DSM circuits / Uday Panwar, Ajay Kumar Dadoria -- A novel approach for high speed and low power by using nano-VLSI interconnects / Narendra Kumar Garg , Vivek Singh Kushwah, Ajay Kumar Dadoria.
Abstract	"The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book discusses advanced MOS devices and their circuit design for energy-efficient systems on chips (SoCs) and covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low power applications. It examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low power MOS transistors and includes research problem statements with specifications, commercially available industry data in the appendix. The book presents Verilog-A model-based simulations for circuit analysis.The text provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology"-- Provided by publisher.
Bibliography note	Includes bibliographical references and index.
Access restriction	Available only to authorized users.
Technical details	Mode of access: World Wide Web
Source of description	Description based on print version record and CIP data provided by publisher.
Issued in other form	Print version: Advanced MOS devices and their circuit applications First edition. Boca Raton : CRC Press, Taylor & Francis Group, 2024 9781032392851
Genre/form	Electronic books.
LCCN	2023036437
ISBN	9781032670270 (ebook)
ISBN	(hardback)
ISBN	(paperback)

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