Impurity characterization in device quality hot filament chemical vapor deposition (HFCVD) grown 3C silicon carbide (3C-SIC) : cooperative research and development final report, crada number crd-17-00684 / Kirstin Alberi.

Author/creator Alberi, K. author.
Other author National Renewable Energy Laboratory (U.S.), issuing body.
Format Electronic
PublicationGolden, CO : National Renewable Energy Laboratory, August 2020.
Description1 online resource (5 pages) : illustrations (chiefly color).
Supplemental Contenthttps://purl.fdlp.gov/GPO/gpo252020
Supplemental ContentAddress at time of PURL creation
Subjects

SeriesNREL/TP ; 5K00-77694
NREL/TP ; 5K00-77694. ^A368158
General note"August 2020."
General noteThis is a publication issued by the United States federal government or produced with federal funds.
General noteIn scope of the U.S. Government Publishing Office Cataloging and Indexing Program (C&I) and Federal Depository Library Program (FDLP).
Bibliography noteIncludes bibliographical references (page 5).
Access restrictionPublicly released.
Report noteTechnical report.
Funding informationSponsored by U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Advanced Manufacturing Office DE-AC36-08GO28308
Source of descriptionDescription based on online resource; title from PDF title page (NREL, viewed January 20, 2026).
Genre/formTechnical reports.
Standard identifier# 1660238 OSTI ID
GPO item number0430-P-03 (online)
Govt. docs number E 9.16:NREL/TP-5K00-77694

Availability

Library Location Call Number Status Item Actions
Electronic Resources ✔ Available