High-k materials in multi-gate FET devices / edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim.
| Other author | Tayal, Shubham. |
| Other author | Singla, Parveen. |
| Other author | Davim, J. Paulo. |
| Format | Electronic |
| Edition | First edition. |
| Publication Info | Boca Raton, FL : CRC Press, 2021. |
| Description | 1 online resource. |
| Supplemental Content | Full text available from eBooks on EBSCOhost |
| Supplemental Content | Full text available from Taylor & Francis eBooks |
| Subjects |
| Series | Science, technology, and management series |
| Contents | Introduction to multi-gate FET devices / T. S. Arulananth, S. V. S. Prasad, and K. Srinivas Rao -- High-k gate dielectrics and metal gate stack technology for advance semiconductor devices : an overview / Vibhu Goyal, Shubham Tayal, Shweta Meena, Ravi Gupta, and Sandip Bhattacharya -- Influence of high-k material in gate engineering and in multi-gate field effect transistor devices / C. Usha and P. Vimala -- Trap charges in high-k and stacked dielectric / Annada Shankar Lenka and Prasanna Kumar Sahu -- Impact of high-k dielectric on the gate-induced drain leakage of multi-gate FETs / Varshini K. Amirtha and Shubham Sahay -- Advanced FET design using high-k gate dielectric and characterization for low-power VLSI / P. Vimala and T. S. Arun Samuel -- Simulation and analysis of gate stack DG MOSFET with application of high-k dielectric using visual TCAD / Nisha Yadav, Sunil Jadav, and Gaurav Saini -- Novel architecture in gate all-around (GAA) MOSFET with high-k dielectric for biomolecule detection / Krutideepa Bhol, Biswajit Jena, Umakanta Nanda, Shubham Tayal, and Amit Kumar Jain -- Asymmetric junctionless transistor : a SRAM performance study / Gaurav Saini and Trailokya Nath Sasamal -- Performability analysis of high-k dielectric-based advanced MOSFET in lower technology / Nodes Manoj Angara, Biswajit Jena, and Ayodeji Olalekan Salau. |
| Abstract | "This book focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. This work will be of high interest to researchers in materials science, electronics engineering, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues"-- Provided by publisher. |
| Bibliography note | Includes bibliographical references and index. |
| Access restriction | Available only to authorized users. |
| Technical details | Mode of access: World Wide Web |
| Source of description | Description based on print version record and CIP data provided by publisher; resource not viewed. |
| Issued in other form | Print version: High-k materials in multi-gate FET devices Boca Raton, FL : CRC Press, 2021 9780367639686 |
| Genre/form | Electronic books. |
| LCCN | 2021029733 |
| ISBN | 9781003121589 (ebook) |
| ISBN | (hardback) |
| ISBN | (paperback) |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Electronic Resources | ✔ Available |