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010 a| 2013427739;

016 7 a| 0158021232| Uk;

020 a| 9781845696894;

020 a| 1845696891;

035 a| (WaSeSS)ssj0000630104;

042 a| lccopycat;

049 a| EREEa| NEHH;

050 00 a| TA418.9.N35b| S555 2011;

050 14 a| T174.7b| .S55 2011;

082 04 a| 621.38152| 22;

245 00 a| Silicon-germanium (SiGe) nanostructuresh| [electronic resource] :b| production, properties and applications in electronics /c| edited by Yasuhiro Shiraki and Noritaka Usami.;

260 a| Cambridge, UK :b| Philadelphia, PA :b| Woodhead Publishing,;

300 a| xx, 627 p. :b| ill. ;c| 24 cm.;

490 1 a| Woodhead Publishing in materials;

504 a| Includes bibliographical references and index.;

506 a| Available only to authorized users.;

520 8 a| Annotationb| Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices.Silicon-germanium (SiGe) nanostructuresreviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapor deposition. This part also includes chapters covering strain engineering and modeling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices --c| Source other than Library of Congress.;

538 a| Mode of access: World Wide Web;

650 0 a| Nanostructured materials.=| ^A584488;

650 0 a| Silicon alloys.=| ^A437847;

650 0 a| Germanium alloys.=| ^A443010;

650 0 a| Electronic circuits.=| ^A28048;

650 0 a| Nanoelectronics.=| ^A770469;

650 07 a| Germaniumverbindungen.2| swd;

650 07 a| Nanostrukturiertes Material.2| swd;

650 07 a| Siliciumhalbleiter.2| swd;

655 0 a| Electronic books.=| ^A491897;

700 1 a| Shiraki, Yasuhiro,d| 1942-?| UNAUTHORIZED;

700 1 a| Usami, Noritaka.?| UNAUTHORIZED;

830 0 a| Woodhead Publishing in materials.=| ^A870288;

856 40 z| Full text available from eBook - Materials Science 2011u| https://go.openathens.net/redirector/ecu.edu?url=http%3A%2F%2Fwww.sciencedirect.com%2Fscience%2Fbook%2F9781845696894;

947 a| (OCoLC)ocn666239787;

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949 a| CLICK ON WEB ADDRESSw| ASISh| HSL77;

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Silicon-germanium (SiGe) nanostructures production, properties and applications in electronics / edited by Yasuhiro Shiraki and Noritaka Usami.

Other author	Shiraki, Yasuhiro, 1942-
Other author	Usami, Noritaka.
Format	Electronic
Publication Info	Cambridge, UK : Philadelphia, PA : Woodhead Publishing,
Description	xx, 627 p. : ill. ; 24 cm.
Supplemental Content	Full text available from eBook - Materials Science 2011
Subjects	Nanostructured materials. Silicon alloys. Germanium alloys. Electronic circuits. Nanoelectronics.

Series	Woodhead Publishing in materials Woodhead Publishing in materials. ^A870288
Summary	Annotation Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices.Silicon-germanium (SiGe) nanostructuresreviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapor deposition. This part also includes chapters covering strain engineering and modeling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices -- Source other than Library of Congress.
Bibliography note	Includes bibliographical references and index.
Access restriction	Available only to authorized users.
Technical details	Mode of access: World Wide Web
Genre/form	Electronic books.
LCCN	2013427739
ISBN	9781845696894
ISBN	1845696891

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