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020 a| 9780852967782;

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245 00 a| Strained silicon heterostructuresh| [electronic resource] :b| materials and devices /c| edited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray.;

260 a| London :b| Institution of Electrical Engineers,;

300 a| xii, 496 p. :b| ill. ;c| 25 cm.;

490 1 a| IEE circuits, devices and systems seriesv| 12;

504 a| Includes bibliographical references and index.;

505 0 a| Introduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics.;

506 a| Available only to authorized users.;

538 a| Mode of access: World Wide Web;

650 0 a| Heterostructures.=| ^A870225;

650 0 a| Silicon.=| ^A62410;

650 7 a| Heterostructures.2| fast;

650 7 a| Silicon.2| fast;

650 07 a| Heterostruktur.2| swd;

650 07 a| Silicium.2| swd;

655 0 a| Electronic books.=| ^A491897;

700 1 a| Maiti, C. K.?| UNAUTHORIZED;

700 1 a| Chakrabarti, N. B.?| UNAUTHORIZED;

700 1 a| Ray, S. K.,c| Dr.?| UNAUTHORIZED;

710 2 a| Institution of Electrical Engineers.=| ^A66638;

830 0 a| IEE circuits, devices and systems series ;v| 12.=| ^A580122;

856 40 z| Full text available from IET Digital Library - Booksu| https://go.openathens.net/redirector/ecu.edu?url=https%3A%2F%2Fdigital-library.theiet.org%2Fdoi%2Fbook%2F10.1049%2FPBCS012E;

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Strained silicon heterostructures materials and devices / edited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray.

Format	Electronic
Publication Info	London : Institution of Electrical Engineers,
Description	xii, 496 p. : ill. ; 25 cm.
Supplemental Content	Full text available from IET Digital Library - Books
Subjects	Heterostructures. Silicon.

Other author/creator	Maiti, C. K.
Other author/creator	Chakrabarti, N. B.
Other author/creator	Ray, S. K., Dr.
Other author/creator	Institution of Electrical Engineers.
Series	IEE circuits, devices and systems series 12 IEE circuits, devices and systems series ; 12. ^A580122
Contents	Introduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics.
Bibliography note	Includes bibliographical references and index.
Access restriction	Available only to authorized users.
Technical details	Mode of access: World Wide Web
Genre/form	Electronic books.
LCCN	2014395719
ISBN	9780852967782
ISBN	0852967780

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Strained silicon heterostructures materials and devices / edited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray.

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