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003 OCoLC;

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007 cr b||||||||||;

008 160712e199606 ohua obt f000 0 eng c;

035 a| (Sirsi) o953458740;

042 a| pcc;

049 a| ERE#;

074 a| 0830-D (online);

086 0 a| NAS 1.15:107255;

100 1 a| Chen, Liang Yue| author.=| ^A686328;

245 10 a| Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors /c| Liang-Yu Chen [and seven others].;

264 1 a| Cleveland, Ohio :b| National Aeronautics and Space Administration, Lewis Research Center,c| June 1996.;

300 a| 1 online resource (6 pages) :b| illustrations.;

336 a| textb| txt2| rdacontent;

337 a| computerb| c2| rdamedia;

338 a| online resourceb| cr2| rdacarrier;

490 1 a| NASA technical memorandum ;v| 107255;

500 a| Title from title screen (viewed July 11, 2016).;

500 a| "June 1996"--Report documentation page.;

500 a| "Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, 1996.";

500 a| "Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.;

500 a| GPO Cataloging Record Distribution Program (CRDP).;

504 a| Includes bibliographical references (page 6).;

536 a| Sponsored by the National Aeronautics and Space Administrationd| WU-242-20-06d| E-10316;

650 7 a| Gas detectors.2| nasat;

650 7 a| Schottky diodes.2| nasat;

650 7 a| Hydrocarbons.2| nasat;

650 7 a| Hydrogen.2| nasat;

650 7 a| Palladium.2| nasat;

650 7 a| Silicon carbides.2| nasat;

650 7 a| Heating.2| nasat;

710 2 a| Lewis Research Center,e| issuing body.=| ^A367825;

710 1 a| United States.b| National Aeronautics and Space Administratione| sponsoring body.=| ^A5437;

776 08 i| Microfiche version:t| Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensorsw| (OCoLC)39669008;

830 0 a| NASA technical memorandumv| 107255.=| ^A467613;

856 40 u| https://purl.fdlp.gov/GPO/gpo69222;

949 a| Click on web addressw| asish| joyner94;

596 a| 1;

998 a| 5633745;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 5633745-1001l| JNETm| JOYNERr| Ys| Yt| JNE1DOu| 5/21/2021x| EDOCUMENTz| JERESOURCE;

Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors / Liang-Yu Chen [and seven others].

Author/creator	Chen, Liang Yu author.
Other author	Lewis Research Center, issuing body.
Other author	United States. National Aeronautics and Space Administration sponsoring body.
Format	Electronic
Publication	Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, June 1996.
Description	1 online resource (6 pages) : illustrations.
Supplemental Content	https://purl.fdlp.gov/GPO/gpo69222

Series	NASA technical memorandum ; 107255 NASA technical memorandum 107255. ^A467613
General note	Title from title screen (viewed July 11, 2016).
General note	"June 1996"--Report documentation page.
General note	"Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, 1996."
General note	"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
General note	GPO Cataloging Record Distribution Program (CRDP).
Bibliography note	Includes bibliographical references (page 6).
Funding information	Sponsored by the National Aeronautics and Space Administration WU-242-20-06 E-10316
Issued in other form	Microfiche version: Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors
GPO item number	0830-D (online)
Govt. docs number	NAS 1.15:107255

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Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors / Liang-Yu Chen [and seven others].

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