Electrical impact of SiC structural crystal defects on high electric field devices / Philip G. Neudeck.
| Author/creator | Neudeck, Philip G. author. |
| Other author | NASA Glenn Research Center, issuing body. |
| Format | Electronic |
| Publication | Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, December 1999. |
| Description | 1 online resource (6 pages) : illustrations. |
| Supplemental Content | https://purl.fdlp.gov/GPO/gpo84758 |
| Variant title | Electrical impact of silicon carbide structural crystal defects on high electric field devices |
| Series | NASA/TM ; 1999-209647 NASA technical memorandum 1999-209647. ^A467613 |
| General note | "December 1999." |
| General note | "Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999." |
| General note | "Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page. |
| General note | CRDP Program record. |
| Bibliography note | Includes bibliographical references (page 6). |
| Report note | Technical memorandum. |
| Funding information | Sponsored by the National Aeronautics and Space Administration WU-505-23-1N-00 E-11995 |
| Source of description | Description based on online resource; title from PDF title page (NASA, viewed Sep. 13, 2017). |
| Issued in other form | Microfiche version: Neudeck, Philip G. Electrical impact of SiC structural crystal defects on high electric field devices |
| GPO item number | 0830-D (online) |
| Govt. docs number | NAS 1.15:209647 |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Electronic Resources | Access Content Online | ✔ Available |