Impact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass / Albert J. Juhasz, Roy C. Tew, and Gene E. Schwarze.

Author/creator Juhasz, Albert J. author.
Other author Tew, Roy C., author.
Other author Schwarze, Gene E., author.
Other author Lewis Research Center, issuing body.
Format Electronic
PublicationCleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, December 1998.
Description1 online resource (6 pages) : illustrations.
Supplemental Contenthttps://purl.fdlp.gov/GPO/gpo83809

SeriesNASA/TM ; 1998-208826
NASA technical memorandum 1998-208826. ^A467613
General note"December 1998."
General note"Prepared for the Space Technology and Applications International Forum cosponsored by the Boeing Company, Lockheed Martin, National Aeronautics and Space Administration, U.S. Air Force, and the U.S. Department of Energy, Albuquerque, New Mexico, January 31-February 4, 1999."
General note"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
General noteCRDP Program record.
Bibliography noteIncludes bibliographical references (page 6).
Report noteTechnical memorandum.
Funding informationSponsored by the National Aeronautics and Space Administration WU-632-1A-1G-00 E-11453
Source of descriptionDescription based on online resource; title from PDF title page (NASA, viewed Aug. 16, 2017).
Issued in other formPrint version: Juhasz, Albert J. Impact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass
Issued in other formMicrofiche version: Juhasz, Albert J. Impact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass
GPO item number0830-D (online)
Govt. docs number NAS 1.15:208826

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