Surface and interface study of PdCr/SiC Schottky diode gas sensor annealed at 425 °C / Liang-Yu Chen [and three others].
| Author/creator | Chen, Liang Yu author. |
| Other author | Lewis Research Center, issuing body. |
| Format | Electronic |
| Publication | Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, May 1998. |
| Description | 1 online resource (6 pages) : illustrations. |
| Supplemental Content | https://purl.fdlp.gov/GPO/gpo82964 |
| Series | NASA/TM ; 1998-107429 NASA technical memorandum 1998-107429. ^A467613 |
| General note | "May 1998." |
| General note | "Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page. |
| General note | GPO Cataloging Record Distribution Program (CRDP). |
| Bibliography note | Includes bibliographical references (page 6). |
| Report note | Technical memorandum. |
| Funding information | Sponsored by the National Aeronautics and Space Administration WU-523-26-13-00 E-11155 |
| Source of description | Description based on online resource; title from PDF title page (NASA, viewed July 24, 2017). |
| Issued in other form | Print version: Surface and interface study of pdcr/sic schottky diode gas sensor annealed at 425 c |
| Issued in other form | Microfiche version: Chen, Liang Yu. Surface and interface study of PdCr/SiC schottky diode gas sensor annealed at 425C̊ |
| GPO item number | 0830-D (online) |
| Govt. docs number | NAS 1.15:107429 |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Electronic Resources | Access Content Online | ✔ Available |