Surface and interface study of PdCr/SiC schottky diode gas sensor annealed at 425�C / Liang-Yu Chen, Gary W. Hunter, and Philip G. Neudeck, Dak Knight ; prepared for the 1997 Fall Meeting sponsored by the Materials Research Society, Boston, Massachusetts, December 1-5, 1997.
| Author/creator | Chen, Liang Yu author. |
| Other author | Lewis Research Center. |
| Format | Microform |
| Publication | [Cleveland, Ohio] : National Aeronautics and Space Administration, Lewis Research Center, [1998] |
| Distribution | Springfield, VA : National Technical Information Service, [Distributor] |
| Description | 6 pages, 4 unnumbered pages : illustrations. |
| Series | NASA technical memorandum ; NASA/TM-1998-107429 NASA technical memorandum 107429. ^A467613 |
| General note | May 1998. |
| General note | Shipping list no.: 99-0384-M. |
| General note | "Aug 6 1998"--Microfiche header. |
| General note | CRDP Program record. |
| Reproduction note | Microfiche. [Washington, D.C.] : [National Aeronautics and Space Administration], 1998. 1 microfiche : negative ; 4 x 6 in. |
| Issued in other form | Print version: Surface and interface study of pdcr/sic schottky diode gas sensor annealed at 425 c |
| Issued in other form | Online version: Chen, Liang Yu. Surface and interface study of PdCr/SiC Schottky diode gas sensor annealed at 425 �C |
| GPO item number | 0830-D (MF) |
| Govt. docs number | NAS 1.15:107429 |
| Stock number | 19980174929 NASA |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Joyner | Microforms B300 | NAS 1.15:107429 | ✔ Available |