Stress-Induced Phenomena in Metallization Third International Workshop: Palo Alto, CA, June 1995

Author/creator Ho, Paul S. Editor
Other author Bravman, John Editor
Other author Li, Che-Yu Editor
Other author Sanchez, John Editor
Format Electronic
Publication InfoA I P Press [Imprint] New York : Springer
Description304 p. ill 09.460 x 06.560 in.
Supplemental ContentFull text available from AIP Conference Proceedings
Subjects

SeriesAIP Conference Proceedings Ser. No. 373
Summary Annotation Proceedings of the June 1995 workshop, reporting on new and basic results in electromigration and stress-induced void formation. Sections on stress characteristics and void formation in thin films and interconnects, and electromigration and damage mechanisms in interconnects, contain research in areas such as stresses in passivated gold and metal lines; electrical measurement of stress- induced void growth; modeling electromigration in multi-level interconnects; comparison of electromigration in submicron Al(Cu) and Cu thin-film lines; and resistance oscillations induced by DC electromigration. No index. Annotation c. by Book News, Inc., Portland, Or.
Access restrictionAvailable only to authorized users.
Technical detailsMode of access: World Wide Web
Genre/formElectronic books.
LCCN 96084949
ISBN9781563964398
ISBN1563964392 (Trade Cloth) Active Record
Standard identifier# 9781563964398
Stock number1563964392 00024965

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