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086 0 a| E 9.22:NREL/PR-520-43248;

100 1 a| Wei, Su-Huai.=| ^A1058258;

245 10 a| Design of Shallow p-type Dopants in ZnO (Presentation) /c| Su-Huai Wei, J. Li, and Y. Yan;

300 a| 1 online resource (32 p.) :b| col. ill.;

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500 a| Published through the Information Bridge: DOE Scientific and Technical Information.;

500 a| "May 2008.";

500 a| Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.;

500 a| National Renewable Energy Laboratory (NREL), Golden, CO.;

500 a| GPO Cataloging Record Distribution Program (CRDP).;

520 3 a| ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.;

536 b| DE-AC36-99GO10337;

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700 1 a| Li, J.=| ^A1118612;

700 1 a| Yan. Y.?| UNAUTHORIZED;

710 1 a| United States.b| Department of Energy.=| ^A634277;

710 2 a| National Renewable Energy Laboratory (U.S.)=| ^A367790;

710 1 a| United States.b| Department of Energy.b| Office of Scientific and Technical Information.=| ^A152306;

711 2 a| IEEE Photovoltaic Specialists Conferencen| (33rd :d| 2008 :c| San Diego, Calif.)?| UNAUTHORIZED;

830 0 a| NREL/PRv| 520-43248.=| ^A782094;

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999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 3089327-1001l| JNETm| JOYNERr| Ys| Yt| JNE1DOu| 8/7/2012x| EDOCUMENTz| JERESOURCE;

Design of Shallow p-type Dopants in ZnO (Presentation) / Su-Huai Wei, J. Li, and Y. Yan.

Author/creator	Wei, Su-Huai
Format	Electronic
Publication Info	Washington, D.C. : United States. Dept. of Energy ; Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2008.
Description	1 online resource (32 p.) : col. ill.
Supplemental Content	https://purl.fdlp.gov/GPO/gpo24405
Subjects	Semiconductor doping. Doped semiconductors. Crystals--Defects.

Other author/creator	Li, J.
Other author/creator	Yan. Y.
Other author/creator	United States. Department of Energy.
Other author/creator	National Renewable Energy Laboratory (U.S.)
Other author/creator	United States. Department of Energy. Office of Scientific and Technical Information.
Other author/creator	IEEE Photovoltaic Specialists Conference 2008 : San Diego, Calif.) (33rd :
Series	NREL/PR ; 520-43248 NREL/PR 520-43248. ^A782094
Summary	ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
General note	Published through the Information Bridge: DOE Scientific and Technical Information.
General note	"May 2008."
General note	Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.
General note	National Renewable Energy Laboratory (NREL), Golden, CO.
General note	GPO Cataloging Record Distribution Program (CRDP).
Funding information	DE-AC36-99GO10337
GPO item number	0430-P-09 (online)
Govt. docs number	E 9.22:NREL/PR-520-43248

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Design of Shallow p-type Dopants in ZnO (Presentation) / Su-Huai Wei, J. Li, and Y. Yan.

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