Tools

LEADER 02052cam a2200493 a 4500

001 ocn231401330;

003 OCoLC;

005 20120611130656.0;

006 m d f ;

007 cr m||||||||||;

008 080609s2008 coua obt f000 0 eng c;

040 a| SOEc| SOEd| GPOd| MvI;

042 a| pcc;

049 a| ERE#;

074 a| 0430-P-04 (online);

086 0 a| E 9.17:NREL/CP-590-42522;

100 1 a| Wei, Su-Huai.=| ^A1058258;

245 10 a| Design of shallow p-type dopants in ZnO :b| preprint /c| S.H. Wei, J. Li, and Y. Yan.;

260 a| Golden, Colo. :b| National Renewable Energy Laboratory,c| [2008];

300 a| 1 online resource (4 p.) :b| ill.;

336 a| textb| txt2| rdacontent;

337 a| computerb| c2| rdamedia;

338 a| online resourceb| cr2| rdacarrier;

490 1 a| NREL/CP ;v| 590-42522;

513 a| Conference paper;b| 11-16 May 2008.;

500 a| Title from title screen (viewed June 9, 2008).;

500 a| "May 2008.";

500 a| "Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008.";

504 a| Includes bibliographical references (p. 4).;

500 a| "The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337.";

500 a| GPO Cataloging Record Distribution Program (CRDP).;

536 g| PVA72213.;

650 0 a| Semiconductor doping.=| ^A142636;

650 0 a| Doped semiconductors.=| ^A185801;

650 0 a| Crystalsx| Defects.=| ^A41975;

700 1 a| Li, Jian.=| ^A429369;

700 1 a| Yan, Yixun.=| ^A1101750;

710 2 a| National Renewable Energy Laboratory (U.S.)=| ^A367790;

830 0 a| Conference paper (National Renewable Energy Laboratory (U.S.)) ;v| 590-42522.=| ^A755847;

856 40 u| https://purl.fdlp.gov/GPO/gpo25721;

949 a| Click on web addressw| asish| joyner94;

596 a| 1;

998 a| 3078761;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 3078761-1001l| JNETm| JOYNERr| Ys| Yt| JNE1DOu| 7/12/2012x| EDOCUMENTz| JERESOURCE;

Design of shallow p-type dopants in ZnO : preprint / S.H. Wei, J. Li, and Y. Yan.

Author/creator	Wei, Su-Huai
Other author	Li, Jian.
Other author	Yan, Yixun.
Other author	National Renewable Energy Laboratory (U.S.)
Format	Electronic
Publication Info	Golden, Colo. : National Renewable Energy Laboratory, [2008]
Description	1 online resource (4 p.) : ill.
Supplemental Content	https://purl.fdlp.gov/GPO/gpo25721
Subjects	Semiconductor doping. Doped semiconductors. Crystals--Defects.

Series	NREL/CP ; 590-42522 Conference paper (National Renewable Energy Laboratory (U.S.)) ; 590-42522. ^A755847
General note	Title from title screen (viewed June 9, 2008).
General note	"May 2008."
General note	"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008."
General note	"The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337."
General note	GPO Cataloging Record Distribution Program (CRDP).
Bibliography note	Includes bibliographical references (p. 4).
Report note	Conference paper; 11-16 May 2008.
Funding information	PVA72213.
GPO item number	0430-P-04 (online)
Govt. docs number	E 9.17:NREL/CP-590-42522

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Design of shallow p-type dopants in ZnO : preprint / S.H. Wei, J. Li, and Y. Yan.

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