Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C / Janis M. Niedra.
| Author/creator | Niedra, Janis M. |
| Other author | NASA Glenn Research Center. |
| Format | Electronic |
| Publication Info | Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2006] |
| Description | 1 online resource (6 pages) : illustrations. |
| Supplemental Content | https://purl.fdlp.gov/GPO/LPS126907 |
| Series | NASA/CR- ; 2006-214257 NASA contractor report ; NASA CR-214257. ^A441636 |
| General note | Title from title screen (viewed on Oct. 20, 2010). |
| General note | "November 2006." |
| Funding information | NAS3-98008 |
| Funding information | NAS3-00145 |
| Funding information | WBS 423799.03.01 |
| GPO item number | 0830-H-14 (online) |
| Govt. docs number | NAS 1.26:2006-214257 |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Electronic Resources | Access Content Online | ✔ Available |