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001 ocn176924613;

003 OCoLC;

005 20141212051745.0;

008 070920s2009 njua b 001 0 eng d;

015 a| GBA9446412| bnb;

015 a| 015-175022| bnb;

016 7 a| 0151750212| Uk;

020 a| 9780471731726;

020 a| 0471731722;

029 1 a| BWXb| R3799086;

029 1 a| CDXb| 5832716;

029 1 a| AU@b| 000044684733;

029 1 a| NLGGCb| 320090043;

029 1 a| GBVCPb| 599848618;

035 a| (Sirsi) o176924613;

035 a| (OCoLC)176924613;

049 a| EREE;

050 4 a| TK7871.99.M44b| R455 2009;

082 04 a| 621.381;

245 00 a| Reliability wearout mechanisms in advanced CMOS technologies /c| Alvin W. Strong [and others].;

300 a| xv, 624 pages :b| illustrations ;c| 25 cm.;

336 a| text2| rdacontent;

337 a| unmediated2| rdamedia;

338 a| volume2| rdacarrier;

490 1 a| IEEE Press series on microelectronic systems;

504 a| Includes bibliographical references and index.;

505 0 a| Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan.;

650 0 a| Metal oxide semiconductors, Complementaryx| Reliability.=| ^A198738;

700 1 a| Strong, Alvin Wayne,d| 1946-=| ^A1222130;

830 0 a| IEEE Press series on microelectronic systems.=| ^A1047028;

994 a| C0b| ERE;

938 a| Baker and Taylorb| BTCPn| BK0007440280;

938 a| Baker & Taylorb| BKTYc| 115.00d| 115.00i| 0471731722n| 0007440280s| active;

938 a| YBP Library Servicesb| YANKn| 2870988;

938 a| Blackwell Book Serviceb| BBUSn| R3799086c| $140.00;

938 a| Coutts Information Servicesb| COUTn| 5832716;

596 a| 1;

998 a| 2277451;

999 a| TK7871.99.M44 R455 2009w| LCc| 1i| 30372015421826d| 4/3/2013e| 7/12/2010f| 4/3/2013g| 3l| JGESm| JOYNERr| Ys| Yt| JGESBKu| 6/16/2010x| BOOKz| JSTACKSo| .STAFF. jmpl;

Reliability wearout mechanisms in advanced CMOS technologies / Alvin W. Strong [and others].

Other author	Strong, Alvin Wayne, 1946-
Format	Book
Publication Info	Piscataway, NJ : IEEE Press ; Hoboken, NJ : Wiley, ©2009.
Description	xv, 624 pages : illustrations ; 25 cm.
Subjects	Metal oxide semiconductors, Complementary--Reliability.

Series	IEEE Press series on microelectronic systems IEEE Press series on microelectronic systems. ^A1047028
Contents	Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan.
Bibliography note	Includes bibliographical references and index.
ISBN	9780471731726
ISBN	0471731722

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Joyner	General Stacks	TK7871.99.M44 R455 2009	✔ Available	Place Hold

Reliability wearout mechanisms in advanced CMOS technologies / Alvin W. Strong [and others].

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