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LEADER 01488cam a2200397 a 4500

001 ocm07462678;

005 20141212040240.0;

008 810417m19811983wb a b 001 0 eng ;

010 a| 81005354;

019 a| 9301700;

020 a| 0387105182 (U.S. : v. 1);

020 a| 0387115153 (U.S. : v. 2);

035 a| (Sirsi) o07462678;

035 a| (OCoLC)7462678;

040 a| DLCc| DLCd| EREd| UtOrBLW;

049 a| ERE*;

050 00 a| QC611.6.D4b| L36;

082 0 a| 537.6/222| 19;

100 1 a| Lannoo, M.q| (Michel),d| 1942-=| ^A131330;

245 10 a| Point defects in semiconductors /c| M. Lannoo, J. Bourgoin.;

260 a| Berlin ;a| New York :b| Springer-Verlag,c| 1981-1983.;

300 a| 2 volumes :b| illustrations ;c| 24 cm.;

336 a| text2| rdacontent;

337 a| unmediated2| rdamedia;

338 a| volume2| rdacarrier;

490 0 a| Springer series in solid-state sciences ; v. 1 ;v| 22, 35;

500 a| Vol. 2 by J. Bourgoin, M. Lannoo, with a foreword by G.D. Watkins.;

504 a| Includes bibliographical references and index.;

505 0 a| 1. Theoretical aspects -- 2. Experimental aspects.;

650 0 a| Semiconductorsx| Defects.=| ^A41977;

650 0 a| Point defects.=| ^A95278;

700 1 a| Bourgoin, J.q| (Jacques),d| 1938-=| ^A131331;

919 a| BOOK;

596 a| 1;

998 a| 182704;

999 a| QC611.6.D4 L36 V.2w| LCc| 1i| 310372002104337d| 11/10/2006e| 9/14/2006l| JGESm| JOYNERn| 1r| Ys| Yt| JGESBKu| 10/21/1986x| BOOKz| JSTACKSo| .STAFF. 0o| .STAFF. Copy Statement : v.2 c.1;

Point defects in semiconductors / M. Lannoo, J. Bourgoin.

Author/creator	Lannoo, M., 1942-
Other author	Bourgoin, J. (Jacques), 1938-
Format	Book
Publication Info	Berlin ; New York : Springer-Verlag, 1981-1983.
Description	2 volumes : illustrations ; 24 cm.
Subjects	Semiconductors--Defects. Point defects.

Series	Springer series in solid-state sciences ; v. 1 ; 22, 35
Contents	1. Theoretical aspects -- 2. Experimental aspects.
General note	Vol. 2 by J. Bourgoin, M. Lannoo, with a foreword by G.D. Watkins.
Bibliography note	Includes bibliographical references and index.
LCCN	81005354
ISBN	0387105182 (U.S. : v. 1)
ISBN	0387115153 (U.S. : v. 2)

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Library	Location	Call Number	Status	Item Actions
Joyner	General Stacks	QC611.6.D4 L36 V.2	✔ Available	Place Hold

Point defects in semiconductors / M. Lannoo, J. Bourgoin.

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