Tools

LEADER 02128cam a2200505Ia 4500

001 ocn310979505;

003 OCoLC;

005 20141212013024.0;

006 m d f ;

007 cr bn|||||||||;

008 090226s1999 mduad sbt f000 0 eng d;

035 a| (Sirsi) o310979505;

035 a| (OCoLC)310979505;

040 a| GPOc| GPOd| EREd| UtOrBLW;

049 a| ERE#;

074 a| 0324-A-01 (online);

086 0 a| D 101.133:1933;

245 00 a| Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor /c| W. D. Sun [and others].;

260 a| Adelphi, MD :b| Army Research Laboratory,c| [1999];

300 a| iii, 13 pages :b| digital, PDF file.;

336 a| text2| rdacontent;

337 a| computer2| rdamedia;

338 a| online resource2| rdacarrier;

490 1 a| ARL-TR ;v| 1933;

500 a| Title from title screen (viewed Feb. 26, 2009).;

500 a| "May 1999.";

504 a| Includes bibliographical references (p. 7).;

513 a| Final;b| 6/1/98-1/15/99.;

536 f| DA PR: AH47;

536 f| PE: 61102A;

538 a| Mode of access: Internet from ARL web site. Address as of 2/26/2009: http://www.arl.army.mil/arlreports/1999/ARL-TR-1933.pdf ; current access via PURL.;

650 0 a| Field-effect transistors.=| ^A86561;

650 0 a| Quantum wells.=| ^A349060;

650 0 a| Photoluminescence.=| ^A315582;

700 1 a| Sun, W. D.?| UNAUTHORIZED;

710 2 a| U.S. Army Research Laboratory.=| ^A367731;

776 0 t| Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistorh| 16 p.w| (OCoLC)45522782;

830 0 a| ARL-TR (Aberdeen Proving Ground, Md.) ;v| 1933.=| ^A566074;

856 40 u| https://purl.fdlp.gov/GPO/LPS109421;

994 a| C0b| ERE;

998 a| 1483608;

998 a| u1483608;

596 a| 1;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| MQ2858792l| JNETm| JOYNERr| Ys| Yt| JNE1DOu| 3/23/2009x| EDOCUMENTz| JERESOURCEo| .STAFF. 0;

Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor / W. D. Sun [and others].

Other author	Sun, W. D.
Other author	U.S. Army Research Laboratory.
Format	Electronic
Publication Info	Adelphi, MD : Army Research Laboratory, [1999]
Description	iii, 13 pages : digital, PDF file.
Supplemental Content	https://purl.fdlp.gov/GPO/LPS109421
Subjects	Field-effect transistors. Quantum wells. Photoluminescence.

Series	ARL-TR ; 1933 ARL-TR (Aberdeen Proving Ground, Md.) ; 1933. ^A566074
General note	Title from title screen (viewed Feb. 26, 2009).
General note	"May 1999."
Bibliography note	Includes bibliographical references (p. 7).
Report note	Final; 6/1/98-1/15/99.
Reproduction note	Joyner- Electronic reproduction. Adelphi, MD : Army Research Laboratory, [1999]. Mode of access: World Wide Web. System requirements: Adobe Acrobat reader.
Funding information	DA PR: AH47
Funding information	PE: 61102A
Technical details	Mode of access: Internet from ARL web site. Address as of 2/26/2009: http://www.arl.army.mil/arlreports/1999/ARL-TR-1933.pdf ; current access via PURL.
Issued in other form	Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor 16 p.
GPO item number	0324-A-01 (online)
Govt. docs number	D 101.133:1933

Availability

Library	Location	Call Number	Status	Item Actions
	Electronic Resources	Access Content Online	✔ Available

Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor / W. D. Sun [and others].

Click here for more information about this title

Availability