Double-level metallization : annual report for October 1, 1985 to September 30, 1986 / G.P. Carver [and others].
| Author/creator | Carver, G. P. |
| Other author | Center for Electronics and Electrical Engineering (U.S.). Semiconductor Devices and Circuits Division. |
| Format | Microform |
| Publication Info | Gaithersburg, MD : U.S. Dept. of Commerce, National Bureau of Standards, National Engineering Laboratory, Center for Electronics and Electrical Engineering, Semiconductor Electronics Division, [1987] |
| Description | 1 volume. |
| Subjects |
| Series | NBSIR ; 87-3579 NBSIR ; 87-3579. ^A429617 |
| Abstract | An outline for a double-level metal process for the fabrication of circuits having a minimum linewidth of 3 micrometers is described. |
| General note | Cataloged from surrogate. |
| General note | "June 1987." |
| General note | Shipping list no.: unknown. |
| Reproduction note | Joyner- Microfiche. [Washington, D.C.] : Supt. of Docs., U.S. G.P.O., [1987]. 1 microfiche : negative. |
| GPO item number | 0247-D (MF) |
| Govt. docs number | C 13.58/6:985-86 |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Joyner | Microforms B300 | C 13.58/6:985-86 | ✔ Available |