Tools

LEADER 02857nam a2200457 i 4500

001 ocm02593767;

003 OCoLC;

005 20221223140616.0;

008 761203s1975 dcua b f000 0 eng d;

019 a| 897988437;

049 a| ERE#;

074 a| 0249-A;

086 0 a| C 13.46:663;

100 1 a| Jesch, Ramon L.=| ^A598121;

245 10 a| Characterization of a high frequency probe assembly for integrated circuit measurement /c| R.L. Jesch [and] C.A. Hoer.;

264 1 a| [Washington, D.C.] :b| National Bureau of Standards,c| 1975.;

300 a| v, 51 pages :b| illustrations ;c| 26 cm;

336 a| textb| txt2| rdacontent;

337 a| unmediatedb| n2| rdamedia;

338 a| volumeb| nc2| rdacarrier;

490 1 a| NBS Technical Note ;v| 663;

500 a| Electromagnetics Division, Institute for Basic Standards.;

500 a| Apr. 1975.;

504 a| Includes bibliographical references (page 40).;

505 0 a| Introduction -- Electrical characterization of the probe assembly -- Matrix solution for characterizing and extracting effects of the probe assembly -- Results of test device measurements -- Data analysis -- Conclusions.;

518 a| Issued April 1975.;

520 a| A detailed, applications-oriented description of a measurement technique that characterizes a high-frequency probe assembly for integrated circuit measurements is given along with the procedure that extracts the parasitic effects of the probe assembly from measurements made at the input connectors of the probe assembly. The scattering parameters of an integrated-circuit device or transistor can now be extracted and accurately determined up to 2 GHz at the wafer stage of assembly. This represents a significant advance over conventional techniques that enable only dc parameters to be measured. Measurement results using this technique are given along with the precision of values obtained as well as the nature of the measurement bias introduced by the probe assembly.;

500 a| GPO Historic Shelflist Project- publication not in hand.;

500 a| GPO Cataloging Record Distribution Program (CRDP).;

650 0 a| Integrated circuitsx| Measurement.=| ^A42814;

650 0 a| Probes (Electronic instruments)=| ^A38846;

650 7 a| Integrated circuitsx| Measurement.2| fast0| (OCoLC)fst00975582;

650 7 a| Probes (Electronic instruments)2| fast0| (OCoLC)fst01077823;

700 1 a| Hoer, Cletus A.e| author.=| ^A1386279;

710 2 a| Institute for Basic Standards (U.S.).b| Electromagnetics Division.=| ^A604315;

830 0 a| NBS technical note ;v| 663.=| ^A4336;

949 a| C 13.46:663w| sudoch| joyner38;

596 a| 1;

998 a| 1008716;

999 a| C 13.46:663w| SUDOCc| 1i| 30372012776735d| 9/7/2005l| JDOSm| JOYNERr| Ys| Yt| JDOSBKu| 9/7/2005x| BOOKz| JFEDDOCSo| .STAFF. 0;

Characterization of a high frequency probe assembly for integrated circuit measurement / R.L. Jesch [and] C.A. Hoer.

Author/creator	Jesch, Ramon L.
Other author	Hoer, Cletus A. author.
Other author	Institute for Basic Standards (U.S.). Electromagnetics Division.
Format	Book
Publication	[Washington, D.C.] : National Bureau of Standards, 1975.
Description	v, 51 pages : illustrations ; 26 cm
Subjects	Integrated circuits--Measurement. Probes (Electronic instruments)

Series	NBS Technical Note ; 663 NBS technical note ; 663. ^A4336
Contents	Introduction -- Electrical characterization of the probe assembly -- Matrix solution for characterizing and extracting effects of the probe assembly -- Results of test device measurements -- Data analysis -- Conclusions.
Abstract	A detailed, applications-oriented description of a measurement technique that characterizes a high-frequency probe assembly for integrated circuit measurements is given along with the procedure that extracts the parasitic effects of the probe assembly from measurements made at the input connectors of the probe assembly. The scattering parameters of an integrated-circuit device or transistor can now be extracted and accurately determined up to 2 GHz at the wafer stage of assembly. This represents a significant advance over conventional techniques that enable only dc parameters to be measured. Measurement results using this technique are given along with the precision of values obtained as well as the nature of the measurement bias introduced by the probe assembly.
General note	Electromagnetics Division, Institute for Basic Standards.
General note	Apr. 1975.
General note	GPO Historic Shelflist Project- publication not in hand.
General note	GPO Cataloging Record Distribution Program (CRDP).
Bibliography note	Includes bibliographical references (page 40).
Date/time/place of a event note	Issued April 1975.
GPO item number	0249-A
Govt. docs number	C 13.46:663

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Characterization of a high frequency probe assembly for integrated circuit measurement / R.L. Jesch [and] C.A. Hoer.

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