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Cover image for The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon

The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon

  • 1981
  • Format: Book
Location Call # Status
Joyner - Fed Docs Stacks C 13.10:400-64 ✔ Available
Cover image for A FORTRAN program for calculating the electrical parameters of extrinsic silicon

A FORTRAN program for calculating the electrical parameters of extrinsic silicon

Location Call # Status
Joyner - Fed Docs Stacks C 13.10:400-63 ✔ Available
Cover image for Microelectronic test pattern NBS-4

Microelectronic test pattern NBS-4

Location Call # Status
Joyner - Fed Docs Stacks C 13.10:400-32 ✔ Available
Cover image for Determination of deep impurities in silicon and germanium by infrared photoconductivity

Determination of deep impurities in silicon and germanium by infrared photoconductivity

Location Call # Status
Joyner - Fed Docs Stacks C 13.46:570 ✔ Available
Cover image for Determination of oxygen concentration in silicon and germanium by infrared absorption

Determination of oxygen concentration in silicon and germanium by infrared absorption

Location Call # Status
Joyner - Fed Docs Stacks C 13.46:529 ✔ Available