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Cover image for Dopant incorporation efficiency in CVD silicon carbide epilayers

Dopant incorporation efficiency in CVD silicon carbide epilayers

Location Call # Status
Joyner - Microforms B300 NAS 1.15:112756 ✔ Available
Cover image for Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers

Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers

Location Call # Status
Joyner - Microforms B300 NAS 1.15:112474 ✔ Available